# Crystalline silicon # Same physical test as in tutorial t31.in, but here # test the DOS using the tetrahedron method # ndtset 3 #Dataset 1 : SCF calculation ngkpt1 2 2 2 # Use a rather loose grid for SCF calculation toldfe1 1.0d-10 prtden1 1 #Dataset 2 : selected k-points, to prepare cut3d analysis getden2 1 getwfk2 1 kptopt2 0 nkpt2 3 nband2 8 iscf2 -2 tolwfr2 1.0d-16 istwfk2 1 1 1 # For the time being, use the simplest storage mode kpt2 0 0 0 # Gamma 0 1/2 1/2 # X 1/2 1/2 1/2 # L #Dataset 3 : partial DOS calculation iscf3 -3 getden3 1 getwfk3 1 prtdos3 3 natsph3 1 iatsph3 2 ratsph3 2.76 # This has been ajusted to give approximately 4 valence electrons per atom ngkpt3 4 4 4 # This is not sufficient for a nice DOS. # One should use ngkpt2 8 8 8 tolwfr3 1.0d-16 shiftk3 0.0 0.0 0.0 # Use a non-shifted k point grid, giving a much 0.0 0.5 0.5 # better-looking DOS graph than the shifted one, 0.5 0.0 0.5 # because tetrahedra with all four same energies 0.5 0.5 0.0 # are avoided #Definition of the unit cell acell 3*10.18 rprim 0.0 0.5 0.5 0.5 0.0 0.5 0.5 0.5 0.0 #Definition of the atom types ntypat 1 znucl 14 #Definition of the atoms natom 2 typat 1 1 xred 0.0 0.0 0.0 1/4 1/4 1/4 #Definition of the planewave basis set ecut 8.0 #Definition of the k-point grid kptopt 1 nshiftk 4 shiftk 0.5 0.5 0.5 0.5 0.0 0.0 0.0 0.5 0.0 0.0 0.0 0.5 #Definition of the SCF procedure nstep 10 diemac 12.0 pp_dirpath "$ABI_PSPDIR" pseudos "PseudosTM_pwteter/14si.pspnc" #%% #%% [setup] #%% executable = abinit #%% test_chain = t38.in, t39.in #%% [files] #%% files_to_test = #%% t38.out, tolnlines = 0, tolabs = 0.000e+00, tolrel = 0.000e+00, fld_options = -ridiculous; #%% t38o_DS3_DOS_AT0002, tolnlines = 0, tolabs = 0.000e+00, tolrel = 0.000e+00, fld_options = -ridiculous #%% [paral_info] #%% max_nprocs = 2 #%% [extra_info] #%% authors = Unknown #%% keywords = #%% description = #%% Test the computation of the partial DOS, using the linear tetrahedron method. #%% 2 Silicon atoms, in a diamond structure. #%%